IRFHE4250DTRPBF Infineon / IR
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details IRFHE4250DTRPBF Infineon / IR
Description: MOSFET 2N-CH 25V 86A/303A 32QFN, Packaging: Bulk, Package / Case: 32-PowerVFQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 156W (Tc), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V, Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA, Supplier Device Package: 32-PQFN (6x6), Part Status: Active.
Weitere Produktangebote IRFHE4250DTRPBF nach Preis ab 3.14 EUR bis 3.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRFHE4250DTRPBF | Hersteller : International Rectifier |
 Description: MOSFET 2N-CH 25V 86A/303A 32QFNPackaging: Bulk Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 86A (Tc), 303A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V, 4765pF @ 13V Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 53nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 35µA, 2.1V @ 100µA Supplier Device Package: 32-PQFN (6x6) Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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