IRFHM4226TRPBF Infineon

Description: MOSFET N CH 25V 28A PQFN, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2.1V @ 50µA, Power Dissipation (Max): 2.7W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TQFN Exposed Pad, Packaging: Tape & Reel (TR).