Technische Details IRFHM9391TRPBF Infineon Technologies
Description: MOSFET P-CH 30V 11A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Vgs(th) (Max) @ Id: 2.4V @ 25µA, Power Dissipation (Max): 2.6W (Ta), Rds On (Max) @ Id, Vgs: 14.6mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFHM9391TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IRFHM9391TRPBF | Infineon Technologies |
Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFHM9391TRPBF |
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Hersteller: Infineon Technologies
Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R
Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)


