IRFI530N International Rectifier
Hersteller: International Rectifier
N-MOSFET 12A 100V 41W 0.011Ω IRFI530N TIRFI530n
Anzahl je Verpackung: 50 Stücke
auf Bestellung 189 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFI530N International Rectifier
Description: MOSFET N-CH 100V 12A TO220AB FP, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote IRFI530N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IRFI530N | Infineon Technologies |
Description: MOSFET N-CH 100V 12A TO220AB FP Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFI530N |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 12A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 100V 12A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH