| Anzahl | Preis |
|---|---|
| 58+ | 2.54 EUR |
| 59+ | 2.43 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFI630GPBF Vishay
Description: MOSFET N-CH 200V 5.9A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Weitere Produktangebote IRFI630GPBF nach Preis ab 1.52 EUR bis 5.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRFI630GPBF | Vishay |
 Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 988 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IRFI630GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
IRFI630GPBF | Vishay |
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IRFI630GPBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 5.9A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
IRFI630GPBF | Vishay Semiconductors |
MOSFETs TO220 200V 5.9A N-CH MOSFET |
auf Bestellung 1756 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFI630GPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 58+ | 2.54 EUR |
| 59+ | 2.48 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.98 EUR |
| IRFI630GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 39+ | 1.84 EUR |
| 50+ | 1.74 EUR |
| 100+ | 1.64 EUR |
| 250+ | 1.52 EUR |
| IRFI630GPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220FP
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 2.9 EUR |
| 100+ | 2.05 EUR |
| IRFI630GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: MOSFET N-CH 200V 5.9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.42 EUR |
| 50+ | 2.74 EUR |
| 100+ | 2.48 EUR |
| IRFI630GPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 200V 5.9A N-CH MOSFET
MOSFETs TO220 200V 5.9A N-CH MOSFET
auf Bestellung 1756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.63 EUR |
| 10+ | 2.85 EUR |
| 100+ | 2.34 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 1.9 EUR |
| 2000+ | 1.88 EUR |