Weitere Produktangebote IRFI644GPBF nach Preis ab 1.31 EUR bis 7.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFI644GPBF | Vishay |
Trans MOSFET N-CH 250V 7.9A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 4185 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
IRFI644GPBF | Vishay |
Trans MOSFET N-CH 250V 7.9A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 4190 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
IRFI644GPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
IRFI644GPBF | Vishay Semiconductors |
MOSFETs TO220 250V 7.9A N-CH MOSFET |
auf Bestellung 1518 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
IRFI644GPBF | Vishay Siliconix |
Description: MOSFET N-CH 250V 7.9A TO220-3Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 3981 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
IRFI644GPBF | VISHAY |
Description: VISHAY - IRFI644GPBF - Leistungs-MOSFET, n-Kanal, 250 V, 7.9 A, 0.28 ohm, TO-220FP, DurchsteckmontagetariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 7.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 40W SVHC: Lead (04-Feb-2026) Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.28ohm |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IRFI644GPBF |
![]() |
Hersteller: Vishay
Trans MOSFET N-CH 250V 7.9A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 250V 7.9A 3-Pin(3+Tab) TO-220FP
auf Bestellung 4185 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 2.44 EUR |
| 72+ | 2.37 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.54 EUR |
| 2500+ | 1.49 EUR |
| IRFI644GPBF |
![]() |
Hersteller: Vishay
Trans MOSFET N-CH 250V 7.9A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 250V 7.9A 3-Pin(3+Tab) TO-220FP
auf Bestellung 4190 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 3.43 EUR |
| 70+ | 2.43 EUR |
| 71+ | 2.31 EUR |
| 72+ | 2.2 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.32 EUR |
| 2500+ | 1.31 EUR |
| IRFI644GPBF |
![]() |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.74 EUR |
| IRFI644GPBF |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs TO220 250V 7.9A N-CH MOSFET
MOSFETs TO220 250V 7.9A N-CH MOSFET
auf Bestellung 1518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.59 EUR |
| 10+ | 3.28 EUR |
| 100+ | 2.56 EUR |
| 500+ | 2.07 EUR |
| 1000+ | 1.95 EUR |
| 2000+ | 1.87 EUR |
| IRFI644GPBF |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 7.9A TO220-3
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 250V 7.9A TO220-3
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 3981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.03 EUR |
| 50+ | 3.63 EUR |
| 100+ | 3.3 EUR |
| 500+ | 2.94 EUR |
| IRFI644GPBF |
![]() |
Hersteller: VISHAY
Description: VISHAY - IRFI644GPBF - Leistungs-MOSFET, n-Kanal, 250 V, 7.9 A, 0.28 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 40W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.28ohm
Description: VISHAY - IRFI644GPBF - Leistungs-MOSFET, n-Kanal, 250 V, 7.9 A, 0.28 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 40W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.28ohm
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 7.88 EUR |
| 54+ | 4.32 EUR |
| 100+ | 3.08 EUR |






