IRFIB41N15DPBF International Rectifier
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Technische Details IRFIB41N15DPBF International Rectifier
Description: MOSFET N-CH 150V 41A TO220AB FP, Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB Full-Pak, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote IRFIB41N15DPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRFIB41N15DPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 41A TO220AB FPInput Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Full-Pak Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
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Im Einkaufswagen Stück im Wert von UAH |
|
IRFIB41N15DPBF | Infineon Technologies |
MOSFET 150V SINGLE N-CH 45mOhms 72nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFIB41N15DPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 41A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 150V 41A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFIB41N15DPBF |
![]() |
Hersteller: Infineon Technologies
MOSFET 150V SINGLE N-CH 45mOhms 72nC
MOSFET 150V SINGLE N-CH 45mOhms 72nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




