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Technische Details IRFIBE30GPBF Vishay
Description: VISHAY - IRFIBE30GPBF - Leistungs-MOSFET, n-Kanal, 800 V, 2.1 A, 3 ohm, TO-220FP, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 800V, rohsCompliant: YES, Dauer-Drainstrom Id: 2.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 35W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: TO-220FP, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 3ohm.
Weitere Produktangebote IRFIBE30GPBF nach Preis ab 1.78 EUR bis 9.47 EUR
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IRFIBE30GPBF | Vishay |
 Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIBE30GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIBE30GPBF | Vishay |
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIBE30GPBF | Vishay Siliconix |
Description: MOSFET N-CH 800V 2.1A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFIBE30GPBF |
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Hersteller: Vishay
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 2.92 EUR |
| IRFIBE30GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.12 EUR |
| 30+ | 2.84 EUR |
| 35+ | 2.43 EUR |
| 50+ | 2.01 EUR |
| 100+ | 1.94 EUR |
| 250+ | 1.86 EUR |
| 500+ | 1.78 EUR |
| IRFIBE30GPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 41+ | 4.33 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.56 EUR |
| IRFIBE30GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.1A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: MOSFET N-CH 800V 2.1A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.47 EUR |
| 10+ | 6.27 EUR |
| 50+ | 4.9 EUR |
| 100+ | 4.46 EUR |
| 500+ | 3.69 EUR |