| Anzahl | Privatkunde |
|---|---|
| 44+ | 4.08 EUR |
| 60+ | 2.88 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
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44 Stücke
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Technische Details IRFIBE30GPBF Vishay
Description: VISHAY - IRFIBE30GPBF - Leistungs-MOSFET, n-Kanal, 800 V, 2.1 A, 3 ohm, TO-220FP, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 800V, rohsCompliant: YES, Dauer-Drainstrom Id: 2.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 35W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: TO-220FP, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 3ohm.
Weitere Produktangebote IRFIBE30GPBF nach Preis ab 2.93 EUR bis 9.51 EUR
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IRFIBE30GPBF | Vishay |
 Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIBE30GPBF | Vishay |
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 476 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIBE30GPBF | Vishay Semiconductors |
MOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFIBE30GPBF | Vishay Siliconix |
Description: MOSFET N-CH 800V 2.1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 915 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFIBE30GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 476 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFIBE30GPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 4.08 EUR |
| 60+ | 2.94 EUR |
| IRFIBE30GPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP
Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220FP
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 37+ | 4.83 EUR |
| 50+ | 4.25 EUR |
| 100+ | 3.7 EUR |
| 200+ | 3.24 EUR |
| IRFIBE30GPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC
MOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.58 EUR |
| 10+ | 4.3 EUR |
| 100+ | 3.72 EUR |
| 500+ | 3.22 EUR |
| 1000+ | 3.06 EUR |
| 2000+ | 2.98 EUR |
| 5000+ | 2.93 EUR |
| IRFIBE30GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 800V 2.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.51 EUR |
| 10+ | 6.31 EUR |
| 50+ | 4.93 EUR |
| 100+ | 4.49 EUR |
| 500+ | 3.7 EUR |
| IRFIBE30GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)