auf Bestellung 5391 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.78 EUR |
| 10+ | 1.09 EUR |
| 100+ | 1.08 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.94 EUR |
| 5000+ | 0.93 EUR |
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Technische Details IRFIZ14GPBF Vishay Semiconductors
Description: MOSFET N-CH 60V 8A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 4.8A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote IRFIZ14GPBF nach Preis ab 1.08 EUR bis 2.78 EUR
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IRFIZ14GPBF | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 8A TO220-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.8A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 739 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFIZ14GPBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8A 3-Pin(3+Tab) TO-220FP |
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IRFIZ14GPBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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IRFIZ14GPBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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| IRFIZ14GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A |
Produkt ist nicht verfügbar |