IRFIZ48VPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 39A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Technische Details IRFIZ48VPBF Infineon Technologies
Description: MOSFET N-CH 60V 39A TO220AB FP, Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB Full-Pak, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 43W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote IRFIZ48VPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRFIZ48VPBF | Infineon / IR |
MOSFET MOSFT 60V 39A 12mOhm 73.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFIZ48VPBF |
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Hersteller: Infineon / IR
MOSFET MOSFT 60V 39A 12mOhm 73.3nC
MOSFET MOSFT 60V 39A 12mOhm 73.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


