IRFL4310PBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 100, Id = 1,6 A, Ptot, Вт = 2,1, Тип монт. = smd, Rds = 200 мОм, Tексп, °C = -55...+150, Ugs(th) = 2...4, Pb-free,... Група товару: Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
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Technische Details IRFL4310PBF International Rectifier/Infineon
Description: MOSFET N-CH 100V SOT223, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Power Dissipation (Max): 1W (Ta), Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFL4310PBF
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IRFL4310PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V SOT223 Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Power Dissipation (Max): 1W (Ta) Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
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IRFL4310PBF | Hersteller : Infineon Technologies |
MOSFETs 100V 1 N-CH HEXFET PWR MOSFET200mOhms |
Produkt ist nicht verfügbar |