IRFL4310PBF International Rectifier/Infineon
Hersteller: International Rectifier/InfineonN-канальний ПТ; Udss, В = 100; Id = 1,6 A; Ptot, Вт = 2,1; Тип монт. = smd; Rds = 200 мОм; Tексп, °C = -55...+150; Ugs(th) = 2...4; Pb-free; SOT-223
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IRFL4310PBF International Rectifier/Infineon
Description: MOSFET N-CH 100V SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Power Dissipation (Max): 1W (Ta), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.
Weitere Produktangebote IRFL4310PBF
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IRFL4310PBF | Hersteller : International Rectifier HiRel Products |
Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 Tube |
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IRFL4310PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Power Dissipation (Max): 1W (Ta) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFL4310PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Power Dissipation (Max): 1W (Ta) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFL4310PBF | Hersteller : Infineon Technologies |
MOSFETs 100V 1 N-CH HEXFET PWR MOSFET200mOhms |
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