IRFNL210BTA-FP001 onsemi
Hersteller: onsemiDescription: IRFNL210 - POWER MOSFET, N-CHANN
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1520+ | 0.32 EUR |
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Technische Details IRFNL210BTA-FP001 onsemi
Description: IRFNL210 - POWER MOSFET, N-CHANN, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-92L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V.
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IRFNL210BTA-FP001 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 1A TO92L Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-92L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
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IRFNL210BTA_FP001 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 200V 1A TO-92L |
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