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IRFP044PBF

IRFP044PBF Vishay Siliconix


IRFP044%2C%20SiHFP044.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 57A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IRFP044PBF Vishay Siliconix

Description: MOSFET N-CH 60V 57A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 34A, 10V, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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IRFP044PBF IRFP044PBF Vishay / Siliconix 91197-219869.pdf MOSFET N-Chan 60V 57 Amp
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IRFP044PBF 91197-219869.pdf
IRFP044PBF
Hersteller: Vishay / Siliconix
MOSFET N-Chan 60V 57 Amp
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Im Einkaufswagen  Stück im Wert von  UAH