IRFP17N50LPBF Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 11.9 EUR |
| 10+ | 9.28 EUR |
| 25+ | 8.17 EUR |
| 100+ | 6.85 EUR |
| 500+ | 6.83 EUR |
| 2500+ | 6.79 EUR |
| 5000+ | 6.76 EUR |
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Technische Details IRFP17N50LPBF Vishay Semiconductors
Description: MOSFET N-CH 500V 16A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 220W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IRFP17N50LPBF nach Preis ab 12.6 EUR bis 12.6 EUR
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IRFP17N50LPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 16A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFP17N50LPBF | Hersteller : IR | 09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFP17N50LPBF | Hersteller : Vishay Siliconix | Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IRFP17N50LPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 64A; 220W; TO247AC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO247AC Kind of package: tube Polarisation: unipolar Gate charge: 130nC On-state resistance: 0.32Ω Drain current: 16A Gate-source voltage: ±30V Pulsed drain current: 64A Drain-source voltage: 500V Power dissipation: 220W |
Produkt ist nicht verfügbar |