Technische Details IRFP21N60LPBF IR
Description: MOSFET N-CH 600V 21A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V.
Weitere Produktangebote IRFP21N60LPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRFP21N60LPBF | Vishay |
 Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IRFP21N60LPBF | Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IRFP21N60LPBF | Vishay Semiconductors |
MOSFETs MOSFET N-CHANNEL 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFP21N60LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 84A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFP21N60LPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFP21N60LPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFP21N60LPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs MOSFET N-CHANNEL 600V
MOSFETs MOSFET N-CHANNEL 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP21N60LPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH