Technische Details IRFP23N50L IR
Description: MOSFET N-CH 500V 23A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Weitere Produktangebote IRFP23N50L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IRFP23N50L | Hersteller : IR |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP23N50L | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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IRFP23N50L | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 23A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFP23N50L | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT IRFP23N50LPBF |
Produkt ist nicht verfügbar |