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| Anzahl | Preis |
|---|---|
| 1+ | 5.77 EUR |
| 10+ | 4.17 EUR |
| 25+ | 3.71 EUR |
| 100+ | 3.22 EUR |
| 250+ | 2.94 EUR |
| 400+ | 2.8 EUR |
| 1200+ | 2.78 EUR |
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Technische Details IRFP4229PBFXKMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRFP4229PBFXKMA1 | Hersteller : Infineon Technologies | IRFP4229PBFXKMA1 |
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| IRFP4229PBFXKMA1 | Hersteller : Infineon Technologies | IRFP4229PBFXKMA1 |
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IRFP4229PBFXKMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V |
Produkt ist nicht verfügbar |