IRFPE50PBF

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 190W; TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Gate charge: 200nC
On-state resistance: 1.2Ω
Drain current: 4.9A
Gate-source voltage: ±20V
Drain-source voltage: 800V
Power dissipation: 190W

Hersteller: Vishay
Trans MOSFET N-CH 800V 7.8A 3-Pin(3+Tab) TO-247AC

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Hersteller: Vishay
Trans MOSFET N-CH 800V 7.8A 3-Pin(3+Tab) TO-247AC

Hersteller: Vishay
Trans MOSFET N-CH 800V 7.8A 3-Pin(3+Tab) TO-247AC

Hersteller: Vishay Semiconductors
MOSFETs TO247 800V 7.8A N-CH MOSFET

Hersteller: Vishay
Trans MOSFET N-CH 800V 7.8A 3-Pin(3+Tab) TO-247AC

Hersteller: Vishay
Trans MOSFET N-CH 800V 7.8A 3-Pin(3+Tab) TO-247AC