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IRFPS30N60KPBF Vishay Siliconix


IRFPS30N60K%2CSiHFPS30N60K.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 30A SUPER247
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
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Technische Details IRFPS30N60KPBF Vishay Siliconix

Description: MOSFET N-CH 600V 30A SUPER247, Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SUPER-247™ (TO-274AA), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 450W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-274AA, Packaging: Tube.

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IRFPS30N60KPBF IRFPS30N60KPBF Vishay / Siliconix 91256-219872.pdf description MOSFET N-Chan 600V 30 Amp
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IRFPS30N60KPBF description 91256-219872.pdf
Hersteller: Vishay / Siliconix
MOSFET N-Chan 600V 30 Amp
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Im Einkaufswagen  Stück im Wert von  UAH