Technische Details IRFPS3810PBF
- MOSFET, N, 100V, 141A, SUPER 247
- Transistor Type:MOSFET
- Max Voltage Vds:100V
- On State Resistance:0.009ohm
- Power Dissipation:441W
- Transistor Case Style:Super-247
- Case Style:Super-247
- Cont Current Id:141A
- Junction to Case Thermal Resistance A:0.34`C/W
- On State resistance @ Vgs = 10V:9ohm
- Power Dissipation Pd:441W
- Pulse Current Idm:230A
- Termination Type:Through Hole
- Transistor Polarity:N
- Typ Voltage Vds:100V
- Typ Voltage Vgs th:5V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRFPS3810PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRFPS3810PBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 100V 170A 3-Pin(3+Tab) TO-274AA Tube |
Produkt ist nicht verfügbar |
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IRFPS3810PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 170A SUPER247 Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 100A, 10V Power Dissipation (Max): 580W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6790 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFPS3810PBF | Hersteller : Infineon / IR |
MOSFET 100V SINGLE N-CH 9mOhms 260nC |
Produkt ist nicht verfügbar |