| Anzahl | Preis |
|---|---|
| 1+ | 3.29 EUR |
| 10+ | 1.56 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.98 EUR |
| 3000+ | 0.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFR010PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 50V 8.2A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote IRFR010PBF-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IRFR010PBF-BE3 | Vishay Siliconix |
 Description: MOSFET N-CH 50V 8.2A DPAKInput Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFR010PBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 8.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 50V 8.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH