IRFR110TRPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V

Hersteller: Vishay
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

Hersteller: Vishay
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

Hersteller: Vishay Semiconductors
MOSFETs N-Chan 100V 4.3 Amp

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V

Hersteller: VISHAY
Description: VISHAY - IRFR110TRPBF - Leistungs-MOSFET, n-Kanal, 100 V, 4.3 A, 0.54 ohm, TO-252AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 25W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-252AA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.54ohm

Hersteller: Vishay
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

Hersteller: Vishay
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R