auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.9 EUR |
Produktrezensionen
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Technische Details IRFR120TRLPBF Vishay
Description: MOSFET N-CH 100V 7.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRFR120TRLPBF nach Preis ab 0.82 EUR bis 2.8 EUR
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IRFR120TRLPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR120TRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR120TRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR120TRLPBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 100V 7.7 Amp |
auf Bestellung 4676 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR120TRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IRFR120TRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 31A Drain-source voltage: 100V Drain current: 4.9A On-state resistance: 0.27Ω Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRFR120TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR120TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRFR120TRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 31A Drain-source voltage: 100V Drain current: 4.9A On-state resistance: 0.27Ω |
Produkt ist nicht verfügbar |