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IRFR120TRPBF-BE3

IRFR120TRPBF-BE3 Vishay Siliconix

sihfr120.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.04 EUR
Mindestbestellmenge: 2000
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Technische Details IRFR120TRPBF-BE3 Vishay Siliconix

Description: MOSFET N-CH 100V 7.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.

Weitere Produktangebote IRFR120TRPBF-BE3 nach Preis ab 0.93 EUR bis 2.5 EUR

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Preis ohne MwSt
IRFR120TRPBF-BE3 IRFR120TRPBF-BE3 Hersteller : Vishay / Siliconix sihfr120.pdf MOSFET 100V N-CH
auf Bestellung 4109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.2 EUR
10+ 1.8 EUR
100+ 1.4 EUR
500+ 1.18 EUR
1000+ 0.96 EUR
2000+ 0.94 EUR
10000+ 0.93 EUR
Mindestbestellmenge: 2
IRFR120TRPBF-BE3 IRFR120TRPBF-BE3 Hersteller : Vishay Siliconix sihfr120.pdf Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 3970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.5 EUR
10+ 2.05 EUR
100+ 1.59 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
Mindestbestellmenge: 8
IRFR120TRPBF-BE3 Hersteller : Vishay sihfr120.pdf N Channel MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2000+1 EUR
Mindestbestellmenge: 2000
IRFR120TRPBF-BE3 Hersteller : Vishay sihfr120.pdf IRFR120TRPBF-BE3
Produkt ist nicht verfügbar
IRFR120TRPBF-BE3 Hersteller : Vishay sihfr120.pdf N Channel MOSFET
Produkt ist nicht verfügbar