IRFR13N20DTRPBF Infineon Technologies
auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.47 EUR |
| 4000+ | 1.28 EUR |
| 6000+ | 1.15 EUR |
| 10000+ | 1.07 EUR |
Produktrezensionen
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Technische Details IRFR13N20DTRPBF Infineon Technologies
Description: MOSFET N-CH 200V 13A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V.
Weitere Produktangebote IRFR13N20DTRPBF nach Preis ab 1.13 EUR bis 1.55 EUR
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IRFR13N20DTRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 200V 13A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR13N20DTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 13A 3-Pin(2+Tab) DPAK T/R |
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IRFR13N20DTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of channel: enhancement Kind of package: reel Anzahl je Verpackung: 2000 Stücke |
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IRFR13N20DTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 13A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V |
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IRFR13N20DTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 13A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V |
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IRFR13N20DTRPBF | Hersteller : Infineon / IR |
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC |
Produkt ist nicht verfügbar |
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IRFR13N20DTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |