Technische Details IRFR18N15DTRLP Infineon
Description: MOSFET N-CH 150V 18A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFR18N15DTRLP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRFR18N15DTRLP | Infineon Technologies |
 Description: MOSFET N-CH 150V 18A DPAKInput Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 5.5V @ 250µA Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRFR18N15DTRLP | Infineon / IR |
MOSFET PLANAR >= 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFR18N15DTRLP |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 18A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR18N15DTRLP |
|
Hersteller: Infineon / IR
MOSFET PLANAR >= 100V
MOSFET PLANAR >= 100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH