| Anzahl | Preis |
|---|---|
| 2000+ | 0.51 EUR |
| 4000+ | 0.49 EUR |
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Technische Details IRFR210TRPBF Vishay
Description: MOSFET N-CH 200V 2.6A DPAK, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Drain to Source Voltage (Vdss): 200 V, Vgs(th) (Max) @ Id: 4V @ 250µA, FET Type: N-Channel, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFR210TRPBF nach Preis ab 0.46 EUR bis 0.92 EUR
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IRFR210TRPBF | Vishay |
 Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR210TRPBF | Vishay Semiconductors |
MOSFETs 200V Vds, 20V Vgs DPAK (TO-252) |
auf Bestellung 11896 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR210TRPBF | Vishay |
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR210TRPBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Drain to Source Voltage (Vdss): 200 V Vgs(th) (Max) @ Id: 4V @ 250µA FET Type: N-Channel Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR210TRPBF | Vishay |
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
|
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IRFR210TRPBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Surface Mount |
auf Bestellung 6659 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFR210TRPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.51 EUR |
| 4000+ | 0.5 EUR |
| IRFR210TRPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs 200V Vds, 20V Vgs DPAK (TO-252)
MOSFETs 200V Vds, 20V Vgs DPAK (TO-252)
auf Bestellung 11896 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.58 EUR |
| 10+ | 0.57 EUR |
| IRFR210TRPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 251+ | 0.58 EUR |
| 255+ | 0.55 EUR |
| 259+ | 0.52 EUR |
| 264+ | 0.49 EUR |
| 268+ | 0.46 EUR |
| IRFR210TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Drain to Source Voltage (Vdss): 200 V
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 2.6A DPAK
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Drain to Source Voltage (Vdss): 200 V
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.75 EUR |
| IRFR210TRPBF |
|
Hersteller: Vishay
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.87 EUR |
| 181+ | 0.79 EUR |
| 234+ | 0.6 EUR |
| 265+ | 0.51 EUR |
| IRFR210TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Description: MOSFET N-CH 200V 2.6A DPAK
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
auf Bestellung 6659 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |