IRFR214PBF Vishay Semiconductors

Description: MOSFET N-CH 250V 2.2A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.