auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 282+ | 0.52 EUR |
| 287+ | 0.50 EUR |
| 291+ | 0.47 EUR |
| 296+ | 0.45 EUR |
| 301+ | 0.42 EUR |
| 500+ | 0.40 EUR |
| 1000+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFR220TRLPBF Vishay
Description: MOSFET N-CH 200V 4.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IRFR220TRLPBF nach Preis ab 0.39 EUR bis 1.07 EUR
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IRFR220TRLPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2371 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR220TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 4.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR220TRLPBF | Hersteller : Vishay Semiconductors |
MOSFETs TO252 200V 4.8A N-CH MOSFET |
auf Bestellung 2666 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR220TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 4.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
auf Bestellung 5215 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR220TRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR220TRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR220TRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Pulsed drain current: 19A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |