IRFR224PBF Vishay
Produktcode: 135321
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller: Vishay
Gehäuse: D-Pak (TO-252)
Uds,V: 250 V
Idd,A: 3,8 A
Rds(on), Ohm: 1,1 Ohm
Ciss, pF/Qg, nC: 260/14
JHGF: SMD
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote IRFR224PBF nach Preis ab 1.13 EUR bis 3.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFR224PBF | Vishay Semiconductors |
MOSFET N-Chan 250V 3.8 Amp |
auf Bestellung 3953 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
IRFR224PBF | Vishay Siliconix |
Description: MOSFET N-CH 250V 3.8A DPAKPackage / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 2141 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFR224PBF |
![]() |
Hersteller: Vishay Semiconductors
MOSFET N-Chan 250V 3.8 Amp
MOSFET N-Chan 250V 3.8 Amp
auf Bestellung 3953 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.17 EUR |
| IRFR224PBF |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 250V 3.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2141 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.82 EUR |
| 75+ | 1.74 EUR |
| 150+ | 1.57 EUR |
| 525+ | 1.32 EUR |
| 1050+ | 1.22 EUR |
| 2025+ | 1.13 EUR |


