Technische Details IRFR3303PBF
- MOSFET, N, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:30V
- Cont Current Id:33A
- On State Resistance:0.031ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:TO-252
- Current Temperature:25`C
- External Depth:10.5mm
- External Length / Height:2.55mm
- External Width:6.8mm
- Full Power Rating Temperature:25`C
- Max Power Dissipation Ptot:57W
- Max Voltage Vds:30V
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation:57W
- Power Dissipation Pd:57W
- Pulse Current Idm:57A
- SMD Marking:IRFR3303PBF
- Transistor Case Style:D-PAK
Weitere Produktangebote IRFR3303PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRFR3303PBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 33A 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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IRFR3303PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 33A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR3303PBF | Hersteller : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC |
Produkt ist nicht verfügbar |