Technische Details IRFR3704ZTRPBF IR
Description: MOSFET N-CH 20V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 15A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2.55V @ 250µA, Supplier Device Package: D-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 10 V.
Weitere Produktangebote IRFR3704ZTRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IRFR3704ZTRPBF | Hersteller : IR |
 SOT252 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR3704ZTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 60A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 15A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRFR3704ZTRPBF | Hersteller : Infineon / IR |
MOSFET 20V 1 N-CH HEXFET 8.4mOhms 9.3nC |
Produkt ist nicht verfügbar |