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IRFR3707ZPBF Infineon


irfr3707zpbf.pdf?fileId=5546d462533600a40153563183ac20bb
Hersteller: Infineon

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Technische Details IRFR3707ZPBF Infineon

Description: MOSFET N-CH 30V 56A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 25µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V.

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IRFR3707ZPBF International Rectifier irfr3707zpbf.pdf description Транзистори
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IRFR3707ZPBF IRFR3707ZPBF Infineon Technologies irfr3707zpbf.pdf?fileId=5546d462533600a40153563183ac20bb description Description: MOSFET N-CH 30V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Produkt ist nicht verfügbar
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IRFR3707ZPBF IRFR3707ZPBF Infineon Technologies Infineon_IRFR3707Z_DS_v01_02_EN-1732001.pdf description MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC
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IRFR3707ZPBF description irfr3707zpbf.pdf
Hersteller: International Rectifier
Транзистори
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IRFR3707ZPBF description irfr3707zpbf.pdf?fileId=5546d462533600a40153563183ac20bb
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Produkt ist nicht verfügbar
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IRFR3707ZPBF description Infineon_IRFR3707Z_DS_v01_02_EN-1732001.pdf
Hersteller: Infineon Technologies
MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH