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IRFR3709ZTRRPBF Infineon Technologies

Name: IRFR3709ZTRRPBF
Brand: Infineon Technologies
SKU: 38112015-3
Price: 1.15 EUR
Availability: InStock

irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5

Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
620+	1.15 EUR

Mindestbestellmenge: 620

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Technische Details IRFR3709ZTRRPBF Infineon Technologies

Description: MOSFET N-CH 30V 86A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V.

Weitere Produktangebote IRFR3709ZTRRPBF

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
IRFR3709ZTRRPBF	Hersteller : Infineon / IR	MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC	auf Bestellung 17 Stücke: Lieferzeit 14-28 Tag (e)
IRFR3709ZTRRPBF	Hersteller : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Kind of package: reel Drain-source voltage: 30V Drain current: 86A Type of transistor: N-MOSFET Power dissipation: 79W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK Anzahl je Verpackung: 3000 Stücke	Produkt ist nicht verfügbar
IRFR3709ZTRRPBF	Hersteller : Infineon Technologies	Description: MOSFET N-CH 30V 86A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V	Produkt ist nicht verfügbar
IRFR3709ZTRRPBF	Hersteller : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Kind of package: reel Drain-source voltage: 30V Drain current: 86A Type of transistor: N-MOSFET Power dissipation: 79W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK	Produkt ist nicht verfügbar