IRFR3709ZTRRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 86A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 508+ | 0.91 EUR |
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Technische Details IRFR3709ZTRRPBF Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V.
Weitere Produktangebote IRFR3709ZTRRPBF nach Preis ab 1.04 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|---|---|---|---|
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IRFR3709ZTRRPBF | Hersteller : Infineon Technologies |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3709ZTRRPBF | Hersteller : Infineon / IR |
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auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFR3709ZTRRPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFR3709ZTRRPBF - IRFR3709 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3709ZTRRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Case: DPAK Drain-source voltage: 30V Drain current: 86A Type of transistor: N-MOSFET Power dissipation: 79W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRFR3709ZTRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRFR3709ZTRRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Case: DPAK Drain-source voltage: 30V Drain current: 86A Type of transistor: N-MOSFET Power dissipation: 79W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |