IRFR3711TRLPBF Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 577+ | 1.12 EUR |
| 1000+ | 1.01 EUR |
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577 Stücke
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Technische Details IRFR3711TRLPBF Infineon Technologies
Description: HEXFET N-CHANNEL POWER MOSFET, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, Power Dissipation (Max): 2.5W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V.
Weitere Produktangebote IRFR3711TRLPBF nach Preis ab 1.01 EUR bis 1.29 EUR
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IRFR3711TRLPBF | International Rectifier |
 Description: HEXFET N-CHANNEL POWER MOSFETPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V |
auf Bestellung 1417 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFR3711TRLPBF | International Rectifier HiRel Products |
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1417 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFR3711TRLPBF |
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auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFR3711TRLPBF |
|
Hersteller: International Rectifier
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 415+ | 1.29 EUR |
| IRFR3711TRLPBF |
|
Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1417 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 577+ | 1.12 EUR |
| 1000+ | 1.01 EUR |
| IRFR3711TRLPBF |
|
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)