IRFR3806PBF

Hersteller: International Rectifier
DPAK Транзистори

Hersteller: ON Semiconductor
N-канальний ПТ, Udss, В = 60, Id = 43, Rds = 15,8 мОм, Р, Вт = 71, Тексп, °C = -55...+175, Тип монт. = smd, DPak, SC-63, TO-252 (2 leads+tab) ,... Транзистори Корпус: D-Pak Од. вим: шт
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V

Hersteller: Infineon Technologies
MOSFETs 60V SINGLE N-CH 15.8mOhms 22nC

Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 15.8mΩ
Gate charge: 22nC
Gate-source voltage: ±20V