IRFR3910TRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2000+ | 0.55 EUR |
| 4000+ | 0.51 EUR |
| 6000+ | 0.5 EUR |
| 10000+ | 0.48 EUR |
| 14000+ | 0.46 EUR |
| 20000+ | 0.45 EUR |
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Technische Details IRFR3910TRPBF Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRFR3910TRPBF nach Preis ab 0.4 EUR bis 3.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRFR3910TRPBF | Infineon Technologies |
 Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3910TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 16A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR3910TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1375 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3910TRPBF | Infineon Technologies |
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3910TRPBF | Infineon Technologies |
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3053 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3910TRPBF | Infineon Technologies |
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3910TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 16A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 19054 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR3910TRPBF | Infineon Technologies |
MOSFETs 100V 1 N-CH HEXFET 115mOhms 29.3nC |
auf Bestellung 16159 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR3910TRPBF | INFINEON |
Description: INFINEON - IRFR3910TRPBF - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.115 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 79W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.115ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFR3910TRPBF | INFINEON |
Description: INFINEON - IRFR3910TRPBF - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.115 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 79W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.115ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFR3910TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.55 EUR |
| 4000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
| 10000+ | 0.45 EUR |
| 14000+ | 0.42 EUR |
| 20000+ | 0.4 EUR |
| IRFR3910TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.73 EUR |
| 4000+ | 0.68 EUR |
| 6000+ | 0.65 EUR |
| 10000+ | 0.62 EUR |
| 14000+ | 0.6 EUR |
| IRFR3910TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 61+ | 1.18 EUR |
| 70+ | 1.02 EUR |
| 99+ | 0.73 EUR |
| 112+ | 0.64 EUR |
| 250+ | 0.56 EUR |
| 500+ | 0.54 EUR |
| IRFR3910TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 95+ | 1.55 EUR |
| 96+ | 1.52 EUR |
| IRFR3910TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3053 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 81+ | 1.82 EUR |
| 108+ | 1.34 EUR |
| 151+ | 0.93 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.72 EUR |
| 2000+ | 0.59 EUR |
| IRFR3910TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 16A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 64+ | 2.3 EUR |
| 95+ | 1.5 EUR |
| 96+ | 1.43 EUR |
| IRFR3910TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 19054 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 11+ | 1.65 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| IRFR3910TRPBF |
|
Hersteller: Infineon Technologies
MOSFETs 100V 1 N-CH HEXFET 115mOhms 29.3nC
MOSFETs 100V 1 N-CH HEXFET 115mOhms 29.3nC
auf Bestellung 16159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.89 EUR |
| 2000+ | 0.81 EUR |
| 4000+ | 0.78 EUR |
| IRFR3910TRPBF |
|
Hersteller: INFINEON
Description: INFINEON - IRFR3910TRPBF - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.115 ohm, TO-252AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 79W
Bauform - Transistor: TO-252AA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IRFR3910TRPBF - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.115 ohm, TO-252AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 79W
Bauform - Transistor: TO-252AA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR3910TRPBF |
|
Hersteller: INFINEON
Description: INFINEON - IRFR3910TRPBF - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.115 ohm, TO-252AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 79W
Bauform - Transistor: TO-252AA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IRFR3910TRPBF - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.115 ohm, TO-252AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 79W
Bauform - Transistor: TO-252AA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)