Technische Details IRFR48ZTRPBF Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V, Power Dissipation (Max): 91W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V.
Weitere Produktangebote IRFR48ZTRPBF nach Preis ab 0.57 EUR bis 3.33 EUR
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IRFR48ZTRPBF | Infineon Technologies |
 Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR48ZTRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR48ZTRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR48ZTRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 11893 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR48ZTRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V |
auf Bestellung 3844 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR48ZTRPBF | Infineon Technologies |
MOSFETs MOSFT 55V 62A 11mOhm 40nC Qg |
auf Bestellung 7445 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFR48ZTRPBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.6 EUR |
| 4000+ | 0.57 EUR |
| IRFR48ZTRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.92 EUR |
| IRFR48ZTRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 14000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 616+ | 1.07 EUR |
| 1000+ | 0.98 EUR |
| 10000+ | 0.84 EUR |
| IRFR48ZTRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 55V 62A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 11893 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 70+ | 2.57 EUR |
| 103+ | 1.7 EUR |
| 200+ | 1.42 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.04 EUR |
| 5000+ | 0.84 EUR |
| IRFR48ZTRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 3844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.04 EUR |
| IRFR48ZTRPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 55V 62A 11mOhm 40nC Qg
MOSFETs MOSFT 55V 62A 11mOhm 40nC Qg
auf Bestellung 7445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.33 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.98 EUR |
| 2000+ | 0.89 EUR |