
auf Bestellung 2439 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
166+ | 0.86 EUR |
178+ | 0.77 EUR |
250+ | 0.74 EUR |
500+ | 0.70 EUR |
1000+ | 0.67 EUR |
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Produktbewertung abgeben
Technische Details IRFR9120TRLPBF Vishay
Description: MOSFET P-CH 100V 5.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Weitere Produktangebote IRFR9120TRLPBF nach Preis ab 0.64 EUR bis 1.92 EUR
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IRFR9120TRLPBF | Hersteller : Vishay |
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auf Bestellung 2439 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9120TRLPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR9120TRLPBF | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9120TRLPBF | Hersteller : Vishay Semiconductors |
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auf Bestellung 1709 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR9120TRLPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
auf Bestellung 5380 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR9120TRLPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFR9120TRLPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFR9120TRLPBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRFR9120TRLPBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -22A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.6A Pulsed drain current: -22A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |