IRFR9220PBF-BE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.82 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.98 EUR |
| 3000+ | 1.95 EUR |
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Technische Details IRFR9220PBF-BE3 Vishay Semiconductors
Description: P-CHANNEL 200V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V.
Weitere Produktangebote IRFR9220PBF-BE3 nach Preis ab 2.08 EUR bis 5.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IRFR9220PBF-BE3 | Vishay Siliconix |
 Description: P-CHANNEL 200VPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V |
auf Bestellung 2918 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFR9220PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: P-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Description: P-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 2918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.93 EUR |
| 10+ | 3.84 EUR |
| 100+ | 2.67 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 2.08 EUR |