IRFS3207TRLPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 75V 170A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.42 EUR |
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Technische Details IRFS3207TRLPBF Infineon Technologies
Description: MOSFET N-CH 75V 170A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V.
Weitere Produktangebote IRFS3207TRLPBF nach Preis ab 2.48 EUR bis 5.19 EUR
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IRFS3207TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3207TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3207TRLPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 75V 180A 4.5mOhm 180nC |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS3207TRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 170A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V |
auf Bestellung 1749 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS3207TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3207TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3207TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3207TRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFS3207TRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 180A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRFS3207TRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 180A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |