Technische Details IRFS3307ZPBF International Rectifier
Description: MOSFET N-CH 75V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V.
Weitere Produktangebote IRFS3307ZPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
IRFS3307ZPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRFS3307ZPBF | Infineon Technologies |
MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFS3307ZPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3307ZPBF |
![]() |
Hersteller: Infineon Technologies
MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC
MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



