Technische Details IRFS3307ZTRRPBF Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V.
Weitere Produktangebote IRFS3307ZTRRPBF nach Preis ab 0.31 EUR bis 6.83 EUR
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IRFS3307ZTRRPBF | Infineon Technologies |
 Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 50400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 27200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 37713 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3307ZTRRPBF | Infineon Technologies |
MOSFETs 75V 1 N-CH HEXFET 5.8mOhms 79nC |
auf Bestellung 745 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS3307ZTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V |
auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFS3307ZTRRPBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 0.31 EUR |
| IRFS3307ZTRRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 50400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.26 EUR |
| 1600+ | 2.13 EUR |
| IRFS3307ZTRRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 27200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 2.75 EUR |
| 500+ | 2.58 EUR |
| 1000+ | 2.38 EUR |
| 10000+ | 2.2 EUR |
| IRFS3307ZTRRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 37713 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 2.75 EUR |
| 500+ | 2.58 EUR |
| 1000+ | 2.38 EUR |
| 10000+ | 2.2 EUR |
| IRFS3307ZTRRPBF |
|
Hersteller: Infineon Technologies
MOSFETs 75V 1 N-CH HEXFET 5.8mOhms 79nC
MOSFETs 75V 1 N-CH HEXFET 5.8mOhms 79nC
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.81 EUR |
| 10+ | 4.46 EUR |
| 100+ | 3.14 EUR |
| 500+ | 2.62 EUR |
| 800+ | 2.34 EUR |
| IRFS3307ZTRRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.83 EUR |
| 10+ | 4.47 EUR |
| 100+ | 3.14 EUR |