Technische Details IRFS38N20DTRLP Infineon Technologies
Description: MOSFET N-CH 200V 43A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.
Weitere Produktangebote IRFS38N20DTRLP nach Preis ab 2.35 EUR bis 7.87 EUR
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IRFS38N20DTRLP | Infineon Technologies |
 Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 16800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS38N20DTRLP | Infineon Technologies |
Description: MOSFET N-CH 200V 43A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS38N20DTRLP | Infineon Technologies |
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS38N20DTRLP | Infineon Technologies |
MOSFETs MOSFT 200V 44A 54mOhm 60nC |
auf Bestellung 1252 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS38N20DTRLP | Infineon Technologies |
Description: MOSFET N-CH 200V 43A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1720 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS38N20DTRLP | Infineon Technologies |
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRFS38N20DTRLP | Infineon Technologies |
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFS38N20DTRLP |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 16800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.57 EUR |
| 1600+ | 2.35 EUR |
| IRFS38N20DTRLP |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 200V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.85 EUR |
| 1600+ | 2.66 EUR |
| IRFS38N20DTRLP |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 3.48 EUR |
| IRFS38N20DTRLP |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 200V 44A 54mOhm 60nC
MOSFETs MOSFT 200V 44A 54mOhm 60nC
auf Bestellung 1252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.48 EUR |
| 10+ | 4.22 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.76 EUR |
| 800+ | 2.46 EUR |
| IRFS38N20DTRLP |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 43A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 43A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.87 EUR |
| 10+ | 5.18 EUR |
| 100+ | 3.65 EUR |
| IRFS38N20DTRLP |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFS38N20DTRLP |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)