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IRFS38N20DTRRP Infineon


irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181
Hersteller: Infineon

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Technische Details IRFS38N20DTRRP Infineon

Description: MOSFET N-CH 200V 43A D2PAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc).

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IRFS38N20DTRRP IRFS38N20DTRRP Infineon Technologies irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181 Description: MOSFET N-CH 200V 43A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS38N20DTRRP IRFS38N20DTRRP Infineon / IR Infineon-IRFS38N20D-DS-v01_02-EN-1732078.pdf MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFS38N20DTRRP irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 43A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS38N20DTRRP Infineon-IRFS38N20D-DS-v01_02-EN-1732078.pdf
Hersteller: Infineon / IR
MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH