Technische Details IRFS4410ZPBF Infineon
Description: MOSFET N-CH 100V 97A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IRFS4410ZPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRFS4410ZPBF | Infineon / IR |
MOSFET 100V SINGLE N-CH 9mOhms 83nC |
auf Bestellung 613 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFS4410ZPBF |
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Hersteller: Infineon / IR
MOSFET 100V SINGLE N-CH 9mOhms 83nC
MOSFET 100V SINGLE N-CH 9mOhms 83nC
auf Bestellung 613 Stücke:
Lieferzeit 10-14 Tag (e)

