IRFS4620PBF
Produktcode: 74099
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Lieblingsprodukt
Hersteller: IR
Gehäuse: D2Pak (TO-263-3)
Uds,V: 200 V
Idd,A: 24 A
Rds(on), Ohm: 63,7 mOhm
Ciss, pF/Qg, nC: 1710/25
JHGF: SMD
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Weitere Produktangebote IRFS4620PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRFS4620PBF | Infineon Technologies |
Description: MOSFET N-CH 200V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRFS4620PBF | Infineon / IR |
MOSFET 200V 1 N-CH HEXFET 78mOhms 25nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFS4620PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4620PBF |
|
Hersteller: Infineon / IR
MOSFET 200V 1 N-CH HEXFET 78mOhms 25nC
MOSFET 200V 1 N-CH HEXFET 78mOhms 25nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH