IRFS4620TRLPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 800+ | 1.09 EUR |
| 1600+ | 0.97 EUR |
| 2400+ | 0.88 EUR |
| 4000+ | 0.8 EUR |
| 5600+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFS4620TRLPBF Infineon Technologies
Description: INFINEON - IRFS4620TRLPBF - Leistungs-MOSFET, n-Kanal, 200 V, 24 A, 0.0775 ohm, TO-263AB, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 24A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 5V, Verlustleistung: 144W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-263AB, Anzahl der Pins: 3Pin(s), Produktpalette: HEXFET, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0775ohm.
Weitere Produktangebote IRFS4620TRLPBF nach Preis ab 0.77 EUR bis 4.26 EUR
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IRFS4620TRLPBF | Infineon Technologies |
 Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 11200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4620TRLPBF | Infineon Technologies |
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 20800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4620TRLPBF | Infineon Technologies |
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 20800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4620TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 24A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V |
auf Bestellung 23200 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS4620TRLPBF | Infineon Technologies |
MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg |
auf Bestellung 7328 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS4620TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 24A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V |
auf Bestellung 23335 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS4620TRLPBF | INFINEON |
Description: INFINEON - IRFS4620TRLPBF - Leistungs-MOSFET, n-Kanal, 200 V, 24 A, 0.0775 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 24A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 144W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0775ohm |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFS4620TRLPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 11200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.09 EUR |
| 1600+ | 0.99 EUR |
| 2400+ | 0.91 EUR |
| 4000+ | 0.84 EUR |
| 5600+ | 0.82 EUR |
| IRFS4620TRLPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 20800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.11 EUR |
| 1600+ | 1.02 EUR |
| 2400+ | 0.93 EUR |
| 4000+ | 0.86 EUR |
| 5600+ | 0.84 EUR |
| IRFS4620TRLPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 20800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.12 EUR |
| 1600+ | 0.99 EUR |
| 2400+ | 0.9 EUR |
| 4000+ | 0.82 EUR |
| 5600+ | 0.77 EUR |
| IRFS4620TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
auf Bestellung 23200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.4 EUR |
| 1600+ | 1.3 EUR |
| 2400+ | 1.24 EUR |
| 4000+ | 1.18 EUR |
| 5600+ | 1.14 EUR |
| 8000+ | 1.11 EUR |
| IRFS4620TRLPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg
MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg
auf Bestellung 7328 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.82 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.35 EUR |
| 800+ | 1.17 EUR |
| IRFS4620TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
auf Bestellung 23335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.26 EUR |
| 10+ | 2.74 EUR |
| 100+ | 1.86 EUR |
| IRFS4620TRLPBF |
|
Hersteller: INFINEON
Description: INFINEON - IRFS4620TRLPBF - Leistungs-MOSFET, n-Kanal, 200 V, 24 A, 0.0775 ohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 24A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 144W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3Pin(s)
Produktpalette: HEXFET
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0775ohm
Description: INFINEON - IRFS4620TRLPBF - Leistungs-MOSFET, n-Kanal, 200 V, 24 A, 0.0775 ohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 24A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 144W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3Pin(s)
Produktpalette: HEXFET
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0775ohm
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)