Technische Details IRFS7534TRLPBF Infineon Technologies
Description: INFINEON - IRFS7534TRLPBF - Leistungs-MOSFET, n-Kanal, 60 V, 195 A, 2400 µohm, TO-263AB, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 195A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.7V, euEccn: NLR, Verlustleistung: 294W, Bauform - Transistor: TO-263AB, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 2400µohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote IRFS7534TRLPBF nach Preis ab 1.48 EUR bis 6.62 EUR
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IRFS7534TRLPBF | Infineon Technologies |
 Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7534TRLPBF | Infineon Technologies |
Description: MOSFET N CH 60V 195A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS7534TRLPBF | Infineon Technologies |
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7534TRLPBF | Infineon Technologies |
MOSFETs MOSFET N CH 60V 195A D2PAK |
auf Bestellung 1238 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS7534TRLPBF | Infineon Technologies |
Description: MOSFET N CH 60V 195A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
auf Bestellung 2061 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS7534TRLPBF | INFINEON |
Description: INFINEON - IRFS7534TRLPBF - Leistungs-MOSFET, n-Kanal, 60 V, 195 A, 2400 µohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 195A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.7V euEccn: NLR Verlustleistung: 294W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2400µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 933 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFS7534TRLPBF |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.6 EUR |
| 1600+ | 1.48 EUR |
| IRFS7534TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 60V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.35 EUR |
| 1600+ | 2.32 EUR |
| IRFS7534TRLPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 195+ | 2.81 EUR |
| IRFS7534TRLPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET N CH 60V 195A D2PAK
MOSFETs MOSFET N CH 60V 195A D2PAK
auf Bestellung 1238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.3 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.43 EUR |
| 500+ | 1.97 EUR |
| 800+ | 1.78 EUR |
| IRFS7534TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: MOSFET N CH 60V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 2061 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.62 EUR |
| 10+ | 4.35 EUR |
| 100+ | 3.06 EUR |
| IRFS7534TRLPBF |
|
Hersteller: INFINEON
Description: INFINEON - IRFS7534TRLPBF - Leistungs-MOSFET, n-Kanal, 60 V, 195 A, 2400 µohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 195A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.7V
euEccn: NLR
Verlustleistung: 294W
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2400µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IRFS7534TRLPBF - Leistungs-MOSFET, n-Kanal, 60 V, 195 A, 2400 µohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 195A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.7V
euEccn: NLR
Verlustleistung: 294W
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2400µohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 933 Stücke:
Lieferzeit 14-21 Tag (e)