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IRFS7730PBF Infineon / IR


irfs7730pbf-1228499.pdf
Hersteller: Infineon / IR
MOSFET 75V Single N-Channel HEXFET Power
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Technische Details IRFS7730PBF Infineon / IR

Description: MOSFET N-CH 75V 195A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: TO-263AB (D2PAK), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.

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IRFS7730PBF IRFS7730PBF Infineon Technologies irfs7730pbf.pdf?fileId=5546d462533600a40153563aad5921dc Description: MOSFET N-CH 75V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7730PBF irfs7730pbf.pdf?fileId=5546d462533600a40153563aad5921dc
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH